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The effects of annealing temperatures on composition and strain in SixGe(1-x) obtained by melting growth of electrodeposited Ge on Si (100)

机译：退火温度对Si（100）上电沉积Ge的熔融生长获得的SixGe（1-x）的成分和应变的影响

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The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 degrees C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at similar to 400 cm(-1) confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing.

机译：研究了退火温度对Si（100）衬底上电沉积Ge的快速熔融生长获得的SixGe1-x成分和应变的影响。在此，在1000、1050和1100摄氏度的温度下执行快速熔化过程1 s。所有退火的样品在（100）方向上显示单晶结构。 Si-Ge振动模式峰值的明显出现在类似于400 cm（-1）处，这证实了由于Si向外扩散到Ge区域而存在Si-Ge混合。在快速熔化过程中，Ge熔化并在短时间内达到热平衡。一旦与熔融的Ge接触，Ge / Si界面处的Si就开始溶解，从而产生Si-Ge混合。

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Zainal Abidin, Mastura Shafinaz; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf;
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1. The Effects of Annealing Temperatures on Composition and Strain in Si_xGe₁₋_x Obtained by Melting Growth of Electrodeposited Ge on Si (100) [J] . Abdul Manaf Hashim, Hironori Chikita, Jong-Hyeok Park, Materials . 2014,第2期

机译：退火温度对Si（100）上电沉积Ge的熔融生长获得的Si _{x Ge _{1- _{x 的组成和应变的影响}}}
2. Fabrication and magnetic properties of ordered Co_(100-x)Pb_x nanowire arrays electrodeposited in AAO templates: Effects of annealing temperature and frequency [J] . Mojgan Najafi, Pezhman Amjadi, Zahra Alemipour Journal of Materials Research . 2017,第6期

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4. Composition and Strain of Coherent Si{sub}(1-x)Ge{sub}x Islands on Si(100) [C] . D. J. Lockwood, X. Wu, J.-M. Baribeau IEEE International Conference on Group IV Photonics . 2006

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5. A study on radial and axial temperature effects on the growth of bulk single crystal of Silicon(x)-Germanium(1-x) in Bridgman setting. [D] . Shemirani, Mehdi M. 2012

机译：在Bridgman环境中径向和轴向温度对硅（x）-锗（1-x）块状单晶生长的影响的研究。
6. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100) [O] . Mastura Shafinaz Zainal Abidin, Tahsin Morshed, Hironori Chikita, 2014

机译：退火温度对Si（100）上电沉积Ge的熔融生长获得的SixGe1-x的成分和应变的影响
7. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100) [O] . Mastura Shafinaz Zainal Abidin, Tahsin Morshed, Hironori Chikita, 2014

机译：退火温度对电沉积Ge在si（100）上熔化生长六Ge1-x组成和应变的影响
8. In situ TEM studies of the effect of misfit strain on the kinetics of Si(1-x)Ge(x) solid phase epitaxy: Temperature calibration and surface effects. [R] . D. C. Paine D. J. Howard N. Evans 1992

机译：原位TEm研究错配应变对si（1-x）Ge（x）固相外延动力学的影响：温度校准和表面效应。

The effects of annealing temperatures on composition and strain in SixGe(1-x) obtained by melting growth of electrodeposited Ge on Si (100)

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